TFS5095 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFS5095
SMD Transistor Code: TE
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 52
Noise Figure, dB: -
Package: SOT323
TFS5095 Transistor Equivalent Substitute - Cross-Reference Search
TFS5095 Datasheet (PDF)
..1. Size:146K tinfar
tfs5095.pdf
tfs5095.pdf
Tin Far Electronic CO.,LTDPage No: 1/8TFS5095 Description The TFS5095 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol OutlineTFS5095 SOT-323 BBase CCollector EEmitter Features Low Noise and High Gain: NF=1.4dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHzS212 =13
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
