All Transistors. TFJD1760 Datasheet

 

TFJD1760 Datasheet and Replacement


   Type Designator: TFJD1760
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO252
 

 TFJD1760 Substitution

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TFJD1760 Datasheet (PDF)

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TFJD1760

Tin Far Electronic CO.,LTD Page No: 1/6 BVCEO 50V IC 3A TFJD1760RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1184J3 Pb-free package Symbol OutlineTFJD1760 TO-252BBaseB C E CCollectorEEmitterAbsolute Maximum Ratings (Ta=25C)Para

Datasheet: T10N60GP , T11 , TFH1036 , TFH1037 , TFH2411 , TFH2412 , TFH2444 , TFH45 , TIP127 , TTC004B , TTC011B , TTC014 , TTC015B , TTC016 , TTC017 , TTC3710B , TTC5460B .

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