TFJD1760 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFJD1760
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO252
TFJD1760 Transistor Equivalent Substitute - Cross-Reference Search
TFJD1760 Datasheet (PDF)
..1. Size:413K tinfar
tfjd1760.pdf
tfjd1760.pdf
Tin Far Electronic CO.,LTD Page No: 1/6 BVCEO 50V IC 3A TFJD1760RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1184J3 Pb-free package Symbol OutlineTFJD1760 TO-252BBaseB C E CCollectorEEmitterAbsolute Maximum Ratings (Ta=25C)Para
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
