TFJD1760 Specs and Replacement

Type Designator: TFJD1760

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO252

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TFJD1760 datasheet

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TFJD1760

Tin Far Electronic CO.,LTD Page No 1/6 BVCEO 50V IC 3A TFJD1760 RCESAT 125m typ. Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1184J3 Pb-free package Symbol Outline TFJD1760 TO-252 B Base B C E C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Para... See More ⇒

Detailed specifications: T10N60GP, T11, TFH1036, TFH1037, TFH2411, TFH2412, TFH2444, TFH45, TIP42, TTC004B, TTC011B, TTC014, TTC015B, TTC016, TTC017, TTC3710B, TTC5460B

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