TFN4505 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN4505
SMD Transistor Code: 3D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
TFN4505 Transistor Equivalent Substitute - Cross-Reference Search
TFN4505 Datasheet (PDF)
..1. Size:309K tinfar
tfn4505.pdf
tfn4505.pdf
Tin Far Electronic CO.,LTD Page No: 1/4 TFN4505 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =0.1V at I /I 10mA/1mA.CE C B= Complementary to BTA1759N3 Symbol OutlineTFN4505 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limit Unit Collector-Base Voltage VCB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
