TFN5177 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN5177
SMD Transistor Code: T1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 5 V
Maximum Collector-Emitter Voltage |Vce|: 3 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT23
TFN5177 Transistor Equivalent Substitute - Cross-Reference Search
TFN5177 Datasheet (PDF)
..1. Size:151K tinfar
tfn5177.pdf
tfn5177.pdf
Tin Far Electronic CO.,LTDPage No: 1/3TFN5177 Description The TFN5177 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol OutlineTFN5177 SOT-23 BBase CCollector EEmitter Features Low current consumption and high gain: S21e2 = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz S21e2 = 11dB ( t
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
