All Transistors. TFN5177 Datasheet

 

TFN5177 Datasheet and Replacement


   Type Designator: TFN5177
   SMD Transistor Code: T1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 5 V
   Maximum Collector-Emitter Voltage |Vce|: 3 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10000 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23
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TFN5177 Datasheet (PDF)

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TFN5177

Tin Far Electronic CO.,LTDPage No: 1/3TFN5177 Description The TFN5177 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol OutlineTFN5177 SOT-23 BBase CCollector EEmitter Features Low current consumption and high gain: S21e2 = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz S21e2 = 11dB ( t

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 3CA42A | 2SD591 | 2SD294 | 2SC789Y | DRA5114E | 2SC259 | BC856A

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