TFN5177 Specs and Replacement
Type Designator: TFN5177
SMD Transistor Code: T1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 5 V
Maximum Collector-Emitter Voltage |Vce|: 3 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SOT23
TFN5177 Substitution
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TFN5177 datasheet
Tin Far Electronic CO.,LTD Page No 1/3 TFN5177 Description The TFN5177 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline TFN5177 SOT-23 B Base C Collector E Emitter Features Low current consumption and high gain S21e 2 = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz S21e 2 = 11dB ( t... See More ⇒
Detailed specifications: TS13003CK, TS13003CT, TS13003HVCT, TS13003MVCT, TS13005CI, TS13005CZ, TS13007BCZ, TS13009CZ, TIP41, TFN807, TFN817, TFN847, TFNA06, TFNA14, TFNH10, TG50, TG51
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