TFN817 Specs and Replacement
Type Designator: TFN817
SMD Transistor Code: 8F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23
TFN817 Substitution
- BJT ⓘ Cross-Reference Search
TFN817 datasheet
Tin Far Electronic CO.,LTD Page No 1/4 TFN817 Description The TFN817 is designed for general purpose switching and amplification applications. Complementary to TFN807. Features High current (max. 500mA) Low voltage (max 45V). Symbol Outline TFN817 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit ... See More ⇒
Detailed specifications: TS13003HVCT, TS13003MVCT, TS13005CI, TS13005CZ, TS13007BCZ, TS13009CZ, TFN5177, TFN807, BC337, TFN847, TFNA06, TFNA14, TFNH10, TG50, TG51, TG52, TG53
Keywords - TFN817 pdf specs
TFN817 cross reference
TFN817 equivalent finder
TFN817 pdf lookup
TFN817 substitution
TFN817 replacement
