All Transistors. TFN817 Datasheet

 

TFN817 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TFN817
   SMD Transistor Code: 8F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

 TFN817 Transistor Equivalent Substitute - Cross-Reference Search

   

TFN817 Datasheet (PDF)

 ..1. Size:126K  tinfar
 tfn817.pdf

TFN817 TFN817

Tin Far Electronic CO.,LTDPage No: 1/4TFN817 Description The TFN817 is designed for general purpose switching and amplification applications. Complementary to TFN807. Features High current (max. 500mA) Low voltage (max 45V). Symbol OutlineTFN817 SOT-23BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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