All Transistors. TFN817 Datasheet

 

TFN817 Datasheet and Replacement


   Type Designator: TFN817
   SMD Transistor Code: 8F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
 

 TFN817 Substitution

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TFN817 Datasheet (PDF)

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TFN817

Tin Far Electronic CO.,LTDPage No: 1/4TFN817 Description The TFN817 is designed for general purpose switching and amplification applications. Complementary to TFN807. Features High current (max. 500mA) Low voltage (max 45V). Symbol OutlineTFN817 SOT-23BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit

Datasheet: TS13003HVCT , TS13003MVCT , TS13005CI , TS13005CZ , TS13007BCZ , TS13009CZ , TFN5177 , TFN807 , D882 , TFN847 , TFNA06 , TFNA14 , TFNH10 , TG50 , TG51 , TG52 , TG53 .

Keywords - TFN817 transistor datasheet

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