TFNA06 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFNA06
SMD Transistor Code: 1G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23
TFNA06 Transistor Equivalent Substitute - Cross-Reference Search
TFNA06 Datasheet (PDF)
..1. Size:184K tinfar
tfna06.pdf
tfna06.pdf
Tin Far Electronic CO.,LTDPage No: 1/5TFNA06 Description The TFNA06 is designed for use in general purpose amplification and switching application. High current , I = 0.5AC Low V , V = 0.25V(typ.) at I /I = 100mA/10mACE(sat) CE(sat) C B Complementary to TFNA56. Pb-free packageSymbol OutlineTFNA06 SOT-23BBase CCollector EEmitter Absolu
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
