TH430 Datasheet, Equivalent, Cross Reference Search
Type Designator: TH430
SMD Transistor Code: TH430
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 330 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 23
Noise Figure, dB: -
Package: M177
TH430 Transistor Equivalent Substitute - Cross-Reference Search
TH430 Datasheet (PDF)
sd1728 th430.pdf
SD1728 (TH430)RF & Microwave transistorsHF SSB applicationFeatures 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gainDescriptionThe SD1728 is a 50V epitaxial silicon NPN planar M177Epoxy sealedtransistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and
th430.pdf
SD1728 (TH430)RF & Microwave transistorsHF SSB applicationFeatures 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gainDescriptionThe SD1728 is a 50V epitaxial silicon NPN planar M177Epoxy sealedtransistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
