TH430 Specs and Replacement

Type Designator: TH430

SMD Transistor Code: TH430

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 330 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 40 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 23

Noise Figure, dB: -

Package: M177

 TH430 Substitution

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TH430 datasheet

 ..1. Size:149K  st

 sd1728 th430.pdf pdf_icon

TH430

SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar M177 Epoxy sealed transistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and... See More ⇒

 ..2. Size:144K  st

 th430.pdf pdf_icon

TH430

SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar M177 Epoxy sealed transistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and... See More ⇒

Detailed specifications: TFNA06, TFNA14, TFNH10, TG50, TG51, TG52, TG53, TG55, TIP42C, TH513, TH560, TH562, THA15, THA42TTD03, THA92TTD03, TIP110A, TIP112L-TN3

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