All Transistors. TH430 Datasheet

 

TH430 Datasheet and Replacement


   Type Designator: TH430
   SMD Transistor Code: TH430
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 330 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 23
   Noise Figure, dB: -
   Package: M177
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TH430 Datasheet (PDF)

 ..1. Size:149K  st
 sd1728 th430.pdf pdf_icon

TH430

SD1728 (TH430)RF & Microwave transistorsHF SSB applicationFeatures 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gainDescriptionThe SD1728 is a 50V epitaxial silicon NPN planar M177Epoxy sealedtransistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and

 ..2. Size:144K  st
 th430.pdf pdf_icon

TH430

SD1728 (TH430)RF & Microwave transistorsHF SSB applicationFeatures 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gainDescriptionThe SD1728 is a 50V epitaxial silicon NPN planar M177Epoxy sealedtransistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA212H | MCH3245 | 2SC345 | 2SD1843 | H3203 | MRF5812 | 3DA96C

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