All Transistors. TH562 Datasheet

 

TH562 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TH562
   SMD Transistor Code: SD1731
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 233 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 330 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SOT121

 TH562 Transistor Equivalent Substitute - Cross-Reference Search

   

TH562 Datasheet (PDF)

 ..1. Size:264K  hgsemi
 th562.pdf

TH562 TH562

HG RF POWER TRANSISTORTH562SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORSD1731 (TH562)RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.OPTIMIZED FOR SSB.30 MHz.50 VOLTS.EFFICIENCY 40%.COMMON EMITTER.GOLD METALLIZATION.P = 220 W PEP WITH 13 dB GAINOUT.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1731 TH562PIN CONNECTIONDESCRIPTIONThe SD1

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ST2SA683

 

 
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