TH562 Specs and Replacement

Type Designator: TH562

SMD Transistor Code: SD1731

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 233 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 330 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SOT121

 TH562 Substitution

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TH562 datasheet

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TH562

HG RF POWER TRANSISTOR TH562 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR SD1731 (TH562) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .OPTIMIZED FOR SSB .30 MHz .50 VOLTS .EFFICIENCY 40% .COMMON EMITTER .GOLD METALLIZATION .P = 220 W PEP WITH 13 dB GAIN OUT .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1731 TH562 PIN CONNECTION DESCRIPTION The SD1... See More ⇒

Detailed specifications: TG50, TG51, TG52, TG53, TG55, TH430, TH513, TH560, A1941, THA15, THA42TTD03, THA92TTD03, TIP110A, TIP112L-TN3, TIP35CW, TIP36CW, TSD1664CY

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