All Transistors. THA42TTD03 Datasheet

 

THA42TTD03 Transistor. Datasheet pdf. Equivalent

Type Designator: THA42TTD03

Marking Code: 1D

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 310 V

Maximum Collector-Emitter Voltage |Vce|: 305 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: WBFBP-03A

THA42TTD03 Transistor Equivalent Substitute - Cross-Reference Search

THA42TTD03 Datasheet (PDF)

1.1. tha42ttd03.pdf Size:171K _update

THA42TTD03

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors THA42TTD03 TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A (1.6×1.6×0.5) TOP unit: mm FEATURES Power dissipation PCM : 0.15 W (Ta=25℃) B E APPLICATION C 1. BASE High Voltage Amplifier 2. EMITTER For portable equipment:(i.e. Mobile phone,MP

Datasheet: TG52 , TG53 , TG55 , TH430 , TH513 , TH560 , TH562 , THA15 , 9013 , THA92TTD03 , TIP110A , TIP112L-TN3 , TIP35CW , TIP36CW , TSD1664CY , TSD1760CP , TSD1858CH .

 


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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |

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