THA42TTD03 Specs and Replacement

Type Designator: THA42TTD03

SMD Transistor Code: 1D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 310 V

Maximum Collector-Emitter Voltage |Vce|: 305 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: WBFBP-03A

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THA42TTD03 datasheet

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THA42TTD03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors THA42TTD03 TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A (1.6 1.6 0.5) TOP unit mm FEATURES Power dissipation PCM 0.15 W (Ta=25 ) B E APPLICATION C 1. BASE High Voltage Amplifier 2. EMITTER For portable equipment (i.e. Mobile phone,MP... See More ⇒

Detailed specifications: TG52, TG53, TG55, TH430, TH513, TH560, TH562, THA15, 2N2222A, THA92TTD03, TIP110A, TIP112L-TN3, TIP35CW, TIP36CW, TSD1664CY, TSD1760CP, TSD1858CH

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