THA42TTD03 Datasheet, Equivalent, Cross Reference Search
Type Designator: THA42TTD03
SMD Transistor Code: 1D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 310 V
Maximum Collector-Emitter Voltage |Vce|: 305 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: WBFBP-03A
THA42TTD03 Transistor Equivalent Substitute - Cross-Reference Search
THA42TTD03 Datasheet (PDF)
..1. Size:171K jiangsu
tha42ttd03.pdf
tha42ttd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors THA42TTD03 TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A (1.61.60.5) TOP unit: mm FEATURES Power dissipation PCM : 0.15 W (Ta=25) B E APPLICATION C 1. BASE High Voltage Amplifier 2. EMITTER For portable equipment:(i.e. Mobile phone,MP
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
