TSD1664CY Datasheet, Equivalent, Cross Reference Search
Type Designator: TSD1664CY
SMD Transistor Code: D1664
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT89
TSD1664CY Transistor Equivalent Substitute - Cross-Reference Search
TSD1664CY Datasheet (PDF)
tsd1664cy.pdf
TSD1664 Low Vcesat NPN Transistor SOT-89 Pin Definition: PRODUCT SUMMARY 1. Base 2. Collector BVCEO 32V 3. Emitter BVCBO 40V IC 1A VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA Features Ordering Information Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) Part No. Package Packing Complementary part with TSB1132 TSD1664CY RM SOT-89 1Kpcs / 7 Reel TSD1664CY
tsd16n25m.pdf
TSD16N25M250V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis =10V 16A,250V,Max.R=0.25 @ VGS advanced planar stripe DMOS technology.DS(on)This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand comm
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
