TK3906LLD03
Datasheet, Equivalent, Cross Reference Search
Type Designator: TK3906LLD03
SMD Transistor Code: 3N
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 4.5
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: WBFBP-03D
TK3906LLD03
Transistor Equivalent Substitute - Cross-Reference Search
TK3906LLD03
Datasheet (PDF)
..1. Size:93K jiangsu
tk3906lld03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3906LLD03 TRANSISTOR WBFBP-03D (1.01.00.5) TOP unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor B E C FEATURES 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary NPN Type Available (TK3904LLD03) BACK 3. COLLECTOR Ultra-Small Surf
8.1. Size:370K jiangsu
tk3906nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3906NND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor B E C FEATURES 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary NPN Type Available (TK3904NND03) BACK 3. COLLECTOR Ultra-Small Surf
9.1. Size:512K jiangsu
tk3904led03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03E Plastic-Encapsulate Transistors TK3904LED03 TRANSISTORNPN WBFBP-03E DESCRIPTION NPN single switching transistor ultra small SMD plastic package FEATURE1. BASE Complementary to TK3906LED03 2. EMITTER Single General-Purpose Switching Transistor 3. COLLECTORAPPLICATION General-Purpose Switching and Ampl
9.2. Size:91K jiangsu
tk3904lld03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3904LLD03 TRANSISTOR WBFBP-03D (1.01.00.5) TOP unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor B E FEATURES C 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary PNP Type Available (TK3906LLD03) BACK Ultra-Small Surface Mount Pack
9.3. Size:297K jiangsu
tk3904nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3904NND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor B E FEATURES C 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary PNP Type Available (TK3906NND03) BACK Ultra-Small Surface Mount Pack
Datasheet: 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.