TSC966CW Datasheet, Equivalent, Cross Reference Search
Type Designator: TSC966CW
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT223
TSC966CW Transistor Equivalent Substitute - Cross-Reference Search
TSC966CW Datasheet (PDF)
8.1. Size:145K taiwansemi
tsc966.pdf
tsc966.pdf
TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Emitter 1. Base 2. Collector 2. Collector BVCBO 600V 3. Base 3. Emitter BVCEO 400V IC 300mA VCE(SAT) 0.5V @ IC / IB = 50mA / 5mA Features Ordering Information High BVceo, BVcbo Part No. Package Packing High current gain TSC966CT B0 TO-92 1K
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
