TSB1386CY Datasheet, Equivalent, Cross Reference Search
Type Designator: TSB1386CY
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT89
TSB1386CY Transistor Equivalent Substitute - Cross-Reference Search
TSB1386CY Datasheet (PDF)
..1. Size:313K taiwansemi
tsb1386cy.pdf
tsb1386cy.pdf
TSB1386 Low Frequency PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base BVCBO -30V 2. Collector 3. Emitter BVCEO -20V IC -5A VCE(SAT) -0.35V @ IC / IB = -4A / -100mA Features Ordering Information Low VCE(SAT) -0.35 @ IC / IB = -4A / -100mA (Typ.) Part No. Package Packing Excellent DC current gain characteristics TSB1386CY RM SOT-89 1Kpcs / 7
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
