All Transistors. TPV5051 Datasheet

 

TPV5051 Datasheet and Replacement


   Type Designator: TPV5051
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 97 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 9 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2000 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: BMA2
 

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TPV5051 Datasheet (PDF)

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TPV5051

TPV5051SILICON NPN MICROWAVE POWER TRANSISTOR50 W, in the 470 860 MHz Range ________________________________________________The silicon n-p-n transistor is designed for ABPush Pull, Common Emitter from 470 to 860 MHz Applications.Features: Power Gain: 6.5 dB Min Output Power: 50 W Efficiency: 45 % MinAbsolute Maximum RatingsParameters Sym Value UnitCollector

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ASZ20 | BF491K | KSD569R | NA31L | SXW13005 | CSA1048GR | 2N5666SMD05

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