TPV5051 Datasheet. Specs and Replacement

Type Designator: TPV5051  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 97 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2000 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: BMA2

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TPV5051 datasheet

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TPV5051

TPV5051 SILICON NPN MICROWAVE POWER TRANSISTOR 50 W, in the 470 860 MHz Range ________________________________________________ The silicon n-p-n transistor is designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. Features Power Gain 6.5 dB Min Output Power 50 W Efficiency 45 % Min Absolute Maximum Ratings Parameters Sym Value Unit Collector ... See More ⇒

Detailed specifications: TSB1424ACW, TSB1424CY, TSB1424CX, TSB1590CX, TSB772CK, TSB772SCT, TPV385, TPV394, 2SD669, TPV591, TPV593, TPV595, TPV595A, TPV596A, TPV597, TPR175, TSC123JNND03

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