TSA1036CX Datasheet, Equivalent, Cross Reference Search
Type Designator: TSA1036CX
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SOT23
TSA1036CX Transistor Equivalent Substitute - Cross-Reference Search
TSA1036CX Datasheet (PDF)
tsa1036cx.pdf
TSA1036CX Taiwan Semiconductor General Purpose PNP Transistor FEATURES KEY PERFORMANCE PARAMETERS Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA PARAMETER VALUE UNIT PNP Silicon Transistor BVCBO -60 V Compliant to RoHS Directive 2011/65/EU and in BVCEO -60 V accordance to WEEE 2002/96/EC IC -0.6 A Halogen-free according to IEC 61249-2-21 VCE(SAT) IC=-150mA
tsa100n20m.pdf
TSA100N20M 200V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 100A,200V,Max.RDS(on)=25m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
