TSA1036CX Datasheet. Specs and Replacement
Type Designator: TSA1036CX 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: SOT23
TSA1036CX Substitution
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TSA1036CX datasheet
TSA1036CX Taiwan Semiconductor General Purpose PNP Transistor FEATURES KEY PERFORMANCE PARAMETERS Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA PARAMETER VALUE UNIT PNP Silicon Transistor BVCBO -60 V Compliant to RoHS Directive 2011/65/EU and in BVCEO -60 V accordance to WEEE 2002/96/EC IC -0.6 A Halogen-free according to IEC 61249-2-21 VCE(SAT) IC=-150mA... See More ⇒
TSA100N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 100A,200V,Max.RDS(on)=25m @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand... See More ⇒
Detailed specifications: TSC136CZ, TSC1417, TSC143ENND03, TSC143TNND03, TSC144ENND03, TSC148DCI, TSC148DCZ, TSC148DCM, BC547, TSA114ENND03, TSA114TNND03, TSA124ENND03, TSA143ENND03, TSA143TNND03, TSA143ZNND03, TSA1765CW, TSA5888CY
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