All Transistors. TSA1036CX Datasheet

 

TSA1036CX Datasheet and Replacement


   Type Designator: TSA1036CX
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SOT23
 

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TSA1036CX Datasheet (PDF)

 ..1. Size:261K  taiwansemi
 tsa1036cx.pdf pdf_icon

TSA1036CX

TSA1036CX Taiwan Semiconductor General Purpose PNP Transistor FEATURES KEY PERFORMANCE PARAMETERS Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA PARAMETER VALUE UNIT PNP Silicon Transistor BVCBO -60 V Compliant to RoHS Directive 2011/65/EU and in BVCEO -60 V accordance to WEEE 2002/96/EC IC -0.6 A Halogen-free according to IEC 61249-2-21 VCE(SAT) IC=-150mA

 9.1. Size:1826K  truesemi
 tsa100n20m.pdf pdf_icon

TSA1036CX

TSA100N20M 200V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 100A,200V,Max.RDS(on)=25m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand

Datasheet: TSC136CZ , TSC1417 , TSC143ENND03 , TSC143TNND03 , TSC144ENND03 , TSC148DCI , TSC148DCZ , TSC148DCM , TIP41C , TSA114ENND03 , TSA114TNND03 , TSA124ENND03 , TSA143ENND03 , TSA143TNND03 , TSA143ZNND03 , TSA1765CW , TSA5888CY .

History: CD4024 | TI899 | KRA105M | T1623 | MMBT9015LT1 | NSVT45010MW6T1G | T2492

Keywords - TSA1036CX transistor datasheet

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