All Transistors. NJVBUB323ZT4G Datasheet

 

NJVBUB323ZT4G Datasheet and Replacement


   Type Designator: NJVBUB323ZT4G
   SMD Transistor Code: BUB323Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 2 MHz
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO263
 

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NJVBUB323ZT4G Datasheet (PDF)

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NJVBUB323ZT4G

BUB323ZNPN Silicon PowerDarlingtonHigh Voltage AutoprotectedD2PAK for Surface Mounthttp://onsemi.comThe BUB323Z is a planar, monolithic, high-voltage powerDarlington with a built-in active zener clamping circuit. This device isAUTOPROTECTEDspecifically designed for unclamped, inductive applications such asElectronic Ignition, Switching Regulators and Motor Control.DARLINGT

Datasheet: NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , NSV2029M3T5G , NJV4030PT1G , NJV4030PT3G , NJV4031NT1G , NJV4031NT3G , BC547 , NJVMJB41CT4G , NJVMJB42CT4G , NJVMJB44H11T4G , NJVMJB45H11T4G , NJVNJD2873T4G , NJVNJD35N04G , NJVNJD35N04T4G , NJW1302G .

History: AC134

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