NJVBUB323ZT4G Datasheet, Equivalent, Cross Reference Search
Type Designator: NJVBUB323ZT4G
SMD Transistor Code: BUB323Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO263
NJVBUB323ZT4G Transistor Equivalent Substitute - Cross-Reference Search
NJVBUB323ZT4G Datasheet (PDF)
..1. Size:83K onsemi
njvbub323zt4g.pdf
njvbub323zt4g.pdf
BUB323ZNPN Silicon PowerDarlingtonHigh Voltage AutoprotectedD2PAK for Surface Mounthttp://onsemi.comThe BUB323Z is a planar, monolithic, high-voltage powerDarlington with a built-in active zener clamping circuit. This device isAUTOPROTECTEDspecifically designed for unclamped, inductive applications such asElectronic Ignition, Switching Regulators and Motor Control.DARLINGT
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
