NJVBUB323ZT4G Datasheet. Specs and Replacement

Type Designator: NJVBUB323ZT4G  πŸ“„πŸ“„ 

SMD Transistor Code: BUB323Z

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 Β°C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO263

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NJVBUB323ZT4G datasheet

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NJVBUB323ZT4G

BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount http //onsemi.com The BUB323Z is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is AUTOPROTECTED specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. DARLINGT... See More ⇒

Detailed specifications: NSV20101JT1G, NSV20200LT1G, NSV20201LT1G, NSV2029M3T5G, NJV4030PT1G, NJV4030PT3G, NJV4031NT1G, NJV4031NT3G, BDT88, NJVMJB41CT4G, NJVMJB42CT4G, NJVMJB44H11T4G, NJVMJB45H11T4G, NJVNJD2873T4G, NJVNJD35N04G, NJVNJD35N04T4G, NJW1302G

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