2N699S Specs and Replacement
Type Designator: 2N699S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO39
2N699S Substitution
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2N699S datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCER Collector Emitter Voltage 80 V VCBO Collector Base Voltage 120 V VEBO Emitter Base Voltage 5V PD Tota... See More ⇒
TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (3) 50 Vdc VCEO Collector-Base Voltage (3) 75 Vdc TO- 116* VCBO Emitter-Base Voltage (3) 6.0 Vdc 2N6... See More ⇒
Detailed specifications: 2N697A, 2N697S, 2N698, 2N6987, 2N6988, 2N699, 2N699A, 2N699B, B772, 2N70, 2N700, 2N700-18, 2N700A, 2N700A-18, 2N701, 2N702, 2N703
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