NSVPZTA92T1G Specs and Replacement
Type Designator: NSVPZTA92T1G
SMD Transistor Code: P2D
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT223
NSVPZTA92T1G Substitution
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NSVPZTA92T1G datasheet
PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon www.onsemi.com Features Complement to PZTA42T1G SOT-223 PACKAGE NSV Prefix for Automotive and Other Applications Requiring PNP SILICON Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable HIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SURFACE M... See More ⇒
PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon http //onsemi.com Features Complement to PZTA42T1G SOT-223 PACKAGE NSV Prefix for Automotive and Other Applications Requiring PNP SILICON Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable HIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SURFAC... See More ⇒
Detailed specifications: NSVMUN5312DW1T3G, NSVMUN5314DW1T3G, NSVMUN5316DW1T1G, NSVMUN5331DW1T1G, NSVMUN5332DW1T1G, NSVMUN5333DW1T1G, NSVMUN5333DW1T3G, NSVMUN5334DW1T1G, TIP41, NSVBCP53-16T3G, NSVBCP56-10T3G, NSVBCP69T1G, NSVBCW32LT1G, NSVBCW68GLT1G, NSVMSD42WT1G, NSVMUN2112T1G, NSVMUN2212T1G
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