All Transistors. NSV9435T1G Datasheet

 

NSV9435T1G Datasheet and Replacement


   Type Designator: NSV9435T1G
   SMD Transistor Code: 9435R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.56 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT223
 

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NSV9435T1G Datasheet (PDF)

 ..1. Size:143K  onsemi
 nsv9435t1g.pdf pdf_icon

NSV9435T1G

NSB9435T1G,NSV9435T1GHigh Current Bias ResistorTransistorPNP Siliconhttp://onsemi.comFeatures Collector -Emitter Sustaining Voltage - POWER BJTVCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdcIC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTShFE = 125 (Min) @ IC = 0.8 AdcVCE(sat) = 0.275 VOLTS= 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

 ..2. Size:219K  onsemi
 nsb9435t1g nsv9435t1g.pdf pdf_icon

NSV9435T1G

NSB9435T1G,NSV9435T1GHigh Current Bias ResistorTransistorPNP Siliconhttp://onsemi.comFeatures Collector -Emitter Sustaining Voltage - POWER BJTVCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdcIC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTShFE = 125 (Min) @ IC = 0.8 AdcVCE(sat) = 0.275 VOLTS= 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

Datasheet: NSV60100DMTWTBG , NSV60101DMTWTBG , NSV60200LT1G , NSV60201LT1G , NSV60600MZ4T1G , NSV60600MZ4T3G , NSV60601MZ4T1G , NSV60601MZ4T3G , A733 , NSVBC817-16LT1G , NSVBC818-40LT1G , NSVBC846BM3T5G , NSVBC847BDW1T2G , NSVBC847BLT3G , NSVBC847BTT1G , NSVBC848BWT1G , NSVBC848CDW1T1G .

History: FSB660A | P209A

Keywords - NSV9435T1G transistor datasheet

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