NSV9435T1G Specs and Replacement

Type Designator: NSV9435T1G

SMD Transistor Code: 9435R

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.56 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 110 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT223

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NSV9435T1G datasheet

 ..1. Size:143K  onsemi

 nsv9435t1g.pdf pdf_icon

NSV9435T1G

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http //onsemi.com Features Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag... See More ⇒

 ..2. Size:219K  onsemi

 nsb9435t1g nsv9435t1g.pdf pdf_icon

NSV9435T1G

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http //onsemi.com Features Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag... See More ⇒

Detailed specifications: NSV60100DMTWTBG, NSV60101DMTWTBG, NSV60200LT1G, NSV60201LT1G, NSV60600MZ4T1G, NSV60600MZ4T3G, NSV60601MZ4T1G, NSV60601MZ4T3G, 2SD1047, NSVBC817-16LT1G, NSVBC818-40LT1G, NSVBC846BM3T5G, NSVBC847BDW1T2G, NSVBC847BLT3G, NSVBC847BTT1G, NSVBC848BWT1G, NSVBC848CDW1T1G

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