A1182 Datasheet, Equivalent, Cross Reference Search
Type Designator: A1182
SMD Transistor Code: ZO_ZY
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT23
A1182 Transistor Equivalent Substitute - Cross-Reference Search
A1182 Datasheet (PDF)
a1182.pdf
A1182 PNP silicon APPLICATION:Audio Frequency Low Power Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -500 mA1Collector Power Dissipation PC 150 mW2Junction Temperature TJ 150Stora
2sa1182.pdf
2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC2859. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCol
ksa1182.pdf
KSA1182Low Frequency Power Amplifier Complement to KSC285932SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -35 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Collector Power D
ad-ksa1182.pdf
www.jscj-elec.com AD-KSA1182 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-KSA1182 series Plastic-Encapsulated Transistor AD-KSA1182 series Transistor (PNP) FEATURES Complementary to AD-KSC2859 AEC-Q101 qualified Version 1.0 1 / 5 2021-07-01 www.jscj-elec.com AD-KSA1182 series MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol
ksa1182.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 KSA1182 TRANSISTOR (PNP)FEATURES Complement to KSC2859 1. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER3. COLLECTORSymbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector
ksa1182.pdf
KSA1182TRANSISTOR (PNP) SOT-23 FEATURES Complement to KSC2859 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 150 mW Tj Junction Temp
ksa1182.pdf
KSA1182 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Complement to KSC2859 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Coll
2sa1182.pdf
SMD Type TransistorsPNP Transistors2SA1182SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-0.5A1 2 Collector Emitter Voltage VCEO=-32V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC2859.1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
