All Transistors. A1309 Datasheet

 

A1309 Datasheet and Replacement


   Type Designator: A1309
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO92
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A1309 Datasheet (PDF)

 ..1. Size:229K  fgx
 a1309.pdf pdf_icon

A1309

A1309 PNP silicon APPLICATIONGENERAL PURPOSE APPLICATION.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 VCollector current IC -100 mACollector Power Dissipation PC 300 mWJunction Temperature TJ 150Storage Temperat

 0.1. Size:252K  1
 2sa1309.pdf pdf_icon

A1309

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

 0.2. Size:35K  panasonic
 2sa1309a.pdf pdf_icon

A1309

Transistor2SA1309ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SC3311A4.0 0.2FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V1.27 1.

 0.3. Size:39K  panasonic
 2sa1309a e.pdf pdf_icon

A1309

Transistor2SA1309ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SC3311A4.0 0.2FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V1.27 1.

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NB212E | MCH3245 | D40DU4 | 2N4283 | KRA742U | MRF5812 | 2N1012

Keywords - A1309 transistor datasheet

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