A1517 Datasheet. Specs and Replacement
Type Designator: A1517 📄📄
SMD Transistor Code: ACG_ACL
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT23
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A1517 datasheet
A1517 PNP silicon APPLICATION Low Noise Amplifier Application. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA 1 Collector Power Dissipation PC 150 mW 2 Junction Temperature TJ 150 Storage Temperature... See More ⇒
SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E L B L High Voltage VCEO=-120V. DIM MILLIMETERS Excellent hFE Linearity _ + A 2.93 0.20 B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 High hFE hFE=200 700. E 2.40+0.30/-0.20 Low Noise NF=1dB(Typ.), 10dB(Max.). 1... See More ⇒
SEMICONDUCTOR KTA1517 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E L B L High Voltage VCEO=-120V. DIM MILLIMETERS Excellent hFE Linearity _ + 2.93 0.20 A B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 High hFE hFE=200 700. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Noise NF=1dB(Typ.), 10dB(Max.). 1 G 1.90 ... See More ⇒
Detailed specifications: A1313, A1317, A1317S, A1320, A1357, A1480, A1504, A1505, 2SC2240, A1585, A1585S, A1586, A1587, A1588, A1621, A1663, A2071
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BJT Parameters and How They Relate
History: A1320 | 2N5830 | 2SA1218 | STA303A | 2N3646 | 2N3620 | 2N5784SM
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