A1517 Datasheet, Equivalent, Cross Reference Search
Type Designator: A1517
SMD Transistor Code: ACG_ACL
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT23
A1517 Transistor Equivalent Substitute - Cross-Reference Search
A1517 Datasheet (PDF)
a1517.pdf
A1517 PNP silicon APPLICATION: Low Noise Amplifier Application.MAXIMUM RATINGSTa25 PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VCollector current IC -100 mA1Collector Power Dissipation PC 150 mW2Junction Temperature TJ 150Storage Temperature
kta1517s.pdf
SEMICONDUCTOR KTA1517STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE AMPLIFIER APPLICATION.FEATURESEL B LHigh Voltage : VCEO=-120V.DIM MILLIMETERSExcellent hFE Linearity_+A 2.93 0.20B 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05High hFE: hFE=200700.E 2.40+0.30/-0.20Low Noise : NF=1dB(Typ.), 10dB(Max.). 1
kta1517.pdf
SEMICONDUCTOR KTA1517TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE AMPLIFIER APPLICATION.FEATURESEL B LHigh Voltage : VCEO=-120V.DIM MILLIMETERSExcellent hFE Linearity_+2.93 0.20AB 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).C 1.30 MAX2High hFE: hFE=200 700. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Noise : NF=1dB(Typ.), 10dB(Max.).1G 1.90
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
