All Transistors. H649A Datasheet

 

H649A Datasheet and Replacement


   Type Designator: H649A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140(TYP) MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
 

 H649A Substitution

   - BJT ⓘ Cross-Reference Search

   

H649A Datasheet (PDF)

 ..1. Size:72K  shantou-huashan
 h649a.pdf pdf_icon

H649A

P NP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H649A LOW FREQUANCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

Datasheet: H1144 , H1357 , H1609 , H1684 , H2682 , H3619 , H3950 , H3953 , 2SC5200 , H6718V , H772 , H882 , HA1011 , HA1837 , HA940 , HB123D , HB1274 .

History: 2SB1143

Keywords - H649A transistor datasheet

 H649A cross reference
 H649A equivalent finder
 H649A lookup
 H649A substitution
 H649A replacement

 

 
Back to Top

 


 
.