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H649A Specs and Replacement

Type Designator: H649A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 typ MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

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H649A datasheet

 ..1. Size:72K  shantou-huashan

 h649a.pdf pdf_icon

H649A

P NP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H649A LOW FREQUANCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Ta=25 TO-126ML Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒

Detailed specifications: H1144, H1357, H1609, H1684, H2682, H3619, H3950, H3953, BD222, H6718V, H772, H882, HA1011, HA1837, HA940, HB123D, HB1274

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