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HB123D Specs and Replacement

Type Designator: HB123D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO126

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HB123D datasheet

 ..1. Size:104K  shantou-huashan

 hb123d.pdf pdf_icon

HB123D

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D APPLICATIONS Power Amplifie ABSOLUTE MAXIMUM RATINGS Ta=25 TO-126ML Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation TC=25 ... See More ⇒

Detailed specifications: H3953, H649A, H6718V, H772, H882, HA1011, HA1837, HA940, 2N5551, HB1274, HB834, HB857, HBD195, HBD196, HBD241C, HBD435, HBD436

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