All Transistors. HB123D Datasheet

 

HB123D Datasheet and Replacement


   Type Designator: HB123D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO126
 

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HB123D Datasheet (PDF)

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HB123D

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D APPLICATIONS Power Amplifie ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTC=25

Datasheet: H3953 , H649A , H6718V , H772 , H882 , HA1011 , HA1837 , HA940 , AC125 , HB1274 , HB834 , HB857 , HBD195 , HBD196 , HBD241C , HBD435 , HBD436 .

History: 2SC2592 | 2SB566 | 2SC3259 | 2SC3313 | DTA043XUB | BLT80

Keywords - HB123D transistor datasheet

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