HBD195 Specs and Replacement
Type Designator: HBD195
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Package: TO126
HBD195 Substitution
- BJT ⓘ Cross-Reference Search
HBD195 datasheet
Detailed specifications: H882 , HA1011 , HA1837 , HA940 , HB123D , HB1274 , HB834 , HB857 , 2N3055 , HBD196 , HBD241C , HBD435 , HBD436 , HBD681 , HBD682 , HBDW93C , HBDW94C .
History: HBD436
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