HBD195 Datasheet, Equivalent, Cross Reference Search
Type Designator: HBD195
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100(TYP) MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO126
HBD195 Transistor Equivalent Substitute - Cross-Reference Search
HBD195 Datasheet (PDF)
hbd195.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD195 APPLICATIONS . .Medium Power Amplifie. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hbd196.pdf
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD196 APPLICATIONS . Audio Power Amplifie. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
