All Transistors. HBD195 Datasheet

 

HBD195 Datasheet and Replacement


   Type Designator: HBD195
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100(TYP) MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO126
 

 HBD195 Substitution

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HBD195 Datasheet (PDF)

 ..1. Size:162K  shantou-huashan
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HBD195

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD195 APPLICATIONS . .Medium Power Amplifie. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.1. Size:169K  shantou-huashan
 hbd196.pdf pdf_icon

HBD195

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD196 APPLICATIONS . Audio Power Amplifie. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

Datasheet: H882 , HA1011 , HA1837 , HA940 , HB123D , HB1274 , HB834 , HB857 , C5198 , HBD196 , HBD241C , HBD435 , HBD436 , HBD681 , HBD682 , HBDW93C , HBDW94C .

History: H772

Keywords - HBD195 transistor datasheet

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