HBD196 Datasheet, Equivalent, Cross Reference Search
Type Designator: HBD196
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 170(TYP) MHz
Collector Capacitance (Cc): 62 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO126
HBD196 Transistor Equivalent Substitute - Cross-Reference Search
HBD196 Datasheet (PDF)
hbd196.pdf
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD196 APPLICATIONS . Audio Power Amplifie. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hbd195.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD195 APPLICATIONS . .Medium Power Amplifie. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
