HBD196 PDF and Equivalents Search

HBD196 Specs and Replacement

Type Designator: HBD196

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 170 typ MHz

Collector Capacitance (Cc): 62 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO126

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HBD196 datasheet

Detailed specifications: HA1011 , HA1837 , HA940 , HB123D , HB1274 , HB834 , HB857 , HBD195 , BC548 , HBD241C , HBD435 , HBD436 , HBD681 , HBD682 , HBDW93C , HBDW94C , HBU3150A .

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