HBD241C Specs and Replacement
Type Designator: HBD241C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
HBD241C Substitution
- BJT ⓘ Cross-Reference Search
HBD241C datasheet
Detailed specifications: HA1837 , HA940 , HB123D , HB1274 , HB834 , HB857 , HBD195 , HBD196 , TIP41 , HBD435 , HBD436 , HBD681 , HBD682 , HBDW93C , HBDW94C , HBU3150A , HBU406 .
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