All Transistors. HBD241C Datasheet

 

HBD241C Datasheet and Replacement


   Type Designator: HBD241C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 115 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220
 

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HBD241C Datasheet (PDF)

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HBD241C

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBD241C APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

Datasheet: HA1837 , HA940 , HB123D , HB1274 , HB834 , HB857 , HBD195 , HBD196 , A1015 , HBD435 , HBD436 , HBD681 , HBD682 , HBDW93C , HBDW94C , HBU3150A , HBU406 .

History: C5T5551 | CSB546 | ECG2345 | 2N5810 | BD372D-10 | NTE2349 | BD368

Keywords - HBD241C transistor datasheet

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