HBD681 Datasheet, Equivalent, Cross Reference Search
Type Designator: HBD681
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126F
HBD681 Transistor Equivalent Substitute - Cross-Reference Search
HBD681 Datasheet (PDF)
hbd681.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD681 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25
hbd682.pdf
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD682 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
