All Transistors. HBD681 Datasheet

 

HBD681 Datasheet, Equivalent, Cross Reference Search

Type Designator: HBD681

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126F

HBD681 Transistor Equivalent Substitute - Cross-Reference Search

 

HBD681 Datasheet (PDF)

0.1. hbd681.pdf Size:141K _shantou-huashan

HBD681
HBD681

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD681 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

9.1. hbd682.pdf Size:141K _shantou-huashan

HBD681
HBD681

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD682 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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