All Transistors. HBD681 Datasheet

 

HBD681 Datasheet and Replacement


   Type Designator: HBD681
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126F
 

 HBD681 Substitution

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HBD681 Datasheet (PDF)

 ..1. Size:141K  shantou-huashan
 hbd681.pdf pdf_icon

HBD681

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD681 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.1. Size:141K  shantou-huashan
 hbd682.pdf pdf_icon

HBD681

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD682 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

Datasheet: HB1274 , HB834 , HB857 , HBD195 , HBD196 , HBD241C , HBD435 , HBD436 , BD140 , HBD682 , HBDW93C , HBDW94C , HBU3150A , HBU406 , HBU406H , HC1061 , HC2073 .

History: 2SC2592 | 2SB566 | BD813A

Keywords - HBD681 transistor datasheet

 HBD681 cross reference
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