HBD681 Datasheet. Specs and Replacement

Type Designator: HBD681  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126F

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HBD681 datasheet

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HBD681

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HBD681

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Detailed specifications: HB1274, HB834, HB857, HBD195, HBD196, HBD241C, HBD435, HBD436, 2SD1047, HBD682, HBDW93C, HBDW94C, HBU3150A, HBU406, HBU406H, HC1061, HC2073

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