All Transistors. HP127W Datasheet

 

HP127W Datasheet and Replacement


   Type Designator: HP127W
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO263
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HP127W Datasheet (PDF)

 ..1. Size:70K  shantou-huashan
 hp127w.pdf pdf_icon

HP127W

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127W APPLICATIONS PNP Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-263 TstgStorage Temperature -55~150 TjJunction Tempera

 9.1. Size:130K  shantou-huashan
 hp127.pdf pdf_icon

HP127W

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127 APPLICATIONS PNP Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperatu

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | 2SA206 | 2N2872 | T11

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