HP127W Specs and Replacement
Type Designator: HP127W
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO263
HP127W Substitution
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HP127W datasheet
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127W APPLICATIONS PNP Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-263 Tstg Storage Temperature -55 150 Tj Junction Tempera... See More ⇒
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127 APPLICATIONS PNP Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -55 150 Tj Junction Temperatu... See More ⇒
Detailed specifications: HE2955, HE3055, HP102, HP107, HP122, HP122U, HP122W, HP127, B772, HP142T, HP142TS, HP142TSW, HP142TW, HP147T, HP147TS, HP147TSW, HP31
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