HS649A Specs and Replacement
Type Designator: HS649A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 typ MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126
HS649A Substitution
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HS649A datasheet
Detailed specifications: HP32B, HP32CF, HP41C, HP42C, HP50, HS2236, HS600K, HS631K, 2SC5198, HS669A, HS772, HS882, HSBD135, HSBD136, HSBD137, HSBD138, HSBD139
Keywords - HS649A pdf specs
HS649A cross reference
HS649A equivalent finder
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