All Transistors. HS649A Datasheet

 

HS649A Datasheet and Replacement


   Type Designator: HS649A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140(TYP) MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
      - BJT Cross-Reference Search

   

HS649A Datasheet (PDF)

 ..1. Size:264K  shantou-huashan
 hs649a.pdf pdf_icon

HS649A

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS649A APPLICATIONS Low Frequancy Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3712 | 2SA1407E | T11 | 2SA1262 | 2N6253 | NB221YX | 2N2872

Keywords - HS649A transistor datasheet

 HS649A cross reference
 HS649A equivalent finder
 HS649A lookup
 HS649A substitution
 HS649A replacement

 

 
Back to Top

 


 
.