All Transistors. HS649A Datasheet

 

HS649A Datasheet and Replacement


   Type Designator: HS649A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140(TYP) MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
 

 HS649A Substitution

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HS649A Datasheet (PDF)

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HS649A

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS649A APPLICATIONS Low Frequancy Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: SLA4031

Keywords - HS649A transistor datasheet

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