HSBD139 Specs and Replacement
Type Designator: HSBD139
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
HSBD139 Substitution
- BJT ⓘ Cross-Reference Search
HSBD139 datasheet
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD138 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
Detailed specifications: HS649A, HS669A, HS772, HS882, HSBD135, HSBD136, HSBD137, HSBD138, BC556, HSBD140, HSBD175, HSBD176, HSBD177, HSBD178, HSBD179, HSBD180, HSBD233
Keywords - HSBD139 pdf specs
HSBD139 cross reference
HSBD139 equivalent finder
HSBD139 pdf lookup
HSBD139 substitution
HSBD139 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2sc1213 | a1491 transistor | 2sc897 | 2sa818 | 2sa763 | a933 | 2sa818 replacement | irfb3607 datasheet