All Transistors. HSBD140 Datasheet

 

HSBD140 Datasheet and Replacement


   Type Designator: HSBD140
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
      - BJT Cross-Reference Search

   

HSBD140 Datasheet (PDF)

 ..1. Size:62K  shantou-huashan
 hsbd140.pdf pdf_icon

HSBD140

PNP SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD140 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.1. Size:123K  shantou-huashan
 hsbd178.pdf pdf_icon

HSBD140

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD178 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.2. Size:123K  shantou-huashan
 hsbd179.pdf pdf_icon

HSBD140

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD179 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.3. Size:123K  shantou-huashan
 hsbd180.pdf pdf_icon

HSBD140

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD180 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

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History: OC703

Keywords - HSBD140 transistor datasheet

 HSBD140 cross reference
 HSBD140 equivalent finder
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