HSBD233 PDF and Equivalents Search

 

HSBD233 Specs and Replacement

Type Designator: HSBD233

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

 HSBD233 Substitution

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HSBD233 datasheet

 ..1. Size:118K  shantou-huashan

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HSBD233

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HSBD233

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HSBD233

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 8.3. Size:118K  shantou-huashan

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HSBD233

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD234 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒

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Detailed specifications: HSBD139, HSBD140, HSBD175, HSBD176, HSBD177, HSBD178, HSBD179, HSBD180, 2SC828, HSBD234, HSBD236, HSBD237, HSBD238, HSBD375, HSBD376, HSBD377, HSBD378

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