All Transistors. HSBD236 Datasheet

 

HSBD236 Datasheet and Replacement


   Type Designator: HSBD236
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
 

 HSBD236 Substitution

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HSBD236 Datasheet (PDF)

 ..1. Size:118K  shantou-huashan
 hsbd236.pdf pdf_icon

HSBD236

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD236 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 8.1. Size:57K  shantou-huashan
 hsbd238.pdf pdf_icon

HSBD236

PNP SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD238 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 8.2. Size:119K  shantou-huashan
 hsbd237.pdf pdf_icon

HSBD236

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD237 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 8.3. Size:118K  shantou-huashan
 hsbd233.pdf pdf_icon

HSBD236

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD233 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

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Keywords - HSBD236 transistor datasheet

 HSBD236 cross reference
 HSBD236 equivalent finder
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