HSBD236 PDF and Equivalents Search

 

HSBD236 Specs and Replacement

Type Designator: HSBD236

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

 HSBD236 Substitution

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HSBD236 datasheet

 ..1. Size:118K  shantou-huashan

 hsbd236.pdf pdf_icon

HSBD236

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD236 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒

 8.1. Size:57K  shantou-huashan

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HSBD236

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HSBD236

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 8.3. Size:118K  shantou-huashan

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HSBD236

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Detailed specifications: HSBD175, HSBD176, HSBD177, HSBD178, HSBD179, HSBD180, HSBD233, HSBD234, S9018, HSBD237, HSBD238, HSBD375, HSBD376, HSBD377, HSBD378, HSBD379, HSBD380

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