HSBD442 Specs and Replacement
Type Designator: HSBD442
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
HSBD442 Substitution
HSBD442 datasheet
Detailed specifications: HSBD434 , HSBD435 , HSBD436 , HSBD437 , HSBD438 , HSBD439 , HSBD440 , HSBD441 , 2N5551 , HSC2621 , H1008 , H1015 , H1020 , H1020S , H1068 , H1116 , H1246 .
History: 2SB584 | 2SC3070 | BD139-10
Keywords - HSBD442 pdf specs
HSBD442 cross reference
HSBD442 equivalent finder
HSBD442 pdf lookup
HSBD442 substitution
HSBD442 replacement
History: 2SB584 | 2SC3070 | BD139-10
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