All Transistors. H1959 Datasheet

 

H1959 Datasheet and Replacement


   Type Designator: H1959
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300(TYP) MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
 

 H1959 Substitution

   - BJT ⓘ Cross-Reference Search

   

H1959 Datasheet (PDF)

 ..1. Size:84K  shantou-huashan
 h1959.pdf pdf_icon

H1959

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1959 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Tempe

Datasheet: H1420 , H1423 , H1426 , H1616 , H1674 , H1740 , H1815 , H1836 , 2SD1047 , H2120 , H2216 , H2222A , H227 , H2274 , H2328S , H2347 , H2369 .

History: H9012 | MPSA44U

Keywords - H1959 transistor datasheet

 H1959 cross reference
 H1959 equivalent finder
 H1959 lookup
 H1959 substitution
 H1959 replacement

 

 
Back to Top

 


 
.