H1959 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

H1959 Specs and Replacement

Type Designator: H1959

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 typ MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

H1959 Substitution

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H1959 datasheet

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NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1959 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Tempe... See More ⇒

Detailed specifications: H1420, H1423, H1426, H1616, H1674, H1740, H1815, H1836, 2N2222A, H2120, H2216, H2222A, H227, H2274, H2328S, H2347, H2369