All Transistors. H3200 Datasheet

 

H3200 Datasheet and Replacement


   Type Designator: H3200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100(TYP) MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 

 H3200 Substitution

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H3200 Datasheet (PDF)

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H3200

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3200 APPLICATIONS Low Noise Audio Amplifier Application. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

Datasheet: H2369 , H237 , H238 , H2655S , H2717 , H2907A , H3192 , H3198 , 8050 , H3202 , H3203 , H327 , H3279 , H3332 , H337 , H368 , H369 .

History: BD947 | 2N1073B | BC267 | 2SA804 | 2N6219 | 2SD1766-Q | BDX54CFI

Keywords - H3200 transistor datasheet

 H3200 cross reference
 H3200 equivalent finder
 H3200 lookup
 H3200 substitution
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