H327 Specs and Replacement
Type Designator: H327
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
H327 Substitution
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H327 datasheet
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H327 SWITCHING AND AMPLFIER APPLICATIONS Suitable for AF-Driver stages and low power output stages ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC... See More ⇒
isc N-Channel MOSFET Transistor ISCNH327P FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage- V = 85V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
Detailed specifications: H2655S, H2717, H2907A, H3192, H3198, H3200, H3202, H3203, 8050, H3279, H3332, H337, H368, H369, H370, H380TM, H3904
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