All Transistors. H422 Datasheet

 

H422 Datasheet and Replacement


   Type Designator: H422
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.83 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO92
 

 H422 Substitution

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H422 Datasheet (PDF)

 ..1. Size:283K  shantou-huashan
 h422.pdf pdf_icon

H422

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H422 APPLICATIONS Class-B video output stages in colour television and professional monitor equipment ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150

 0.1. Size:503K  international rectifier
 irfh4226.pdf pdf_icon

H422

FastIRFET IRFH4226PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4(@ VGS = 10V) m(@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 70 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 16 nC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCW10L | 2SA1774Q | BSV29 | HA7510 | MMUN2230LT1 | A747 | KT361D1

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