H422 Datasheet, Equivalent, Cross Reference Search
Type Designator: H422
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.83 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
H422 Transistor Equivalent Substitute - Cross-Reference Search
H422 Datasheet (PDF)
h422.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H422 APPLICATIONS Class-B video output stages in colour television and professional monitor equipment ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150
irfh4226.pdf
FastIRFET IRFH4226PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4(@ VGS = 10V) m(@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 70 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 16 nC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
