H422 Specs and Replacement
Type Designator: H422
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.83 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
H422 Substitution
- BJT ⓘ Cross-Reference Search
H422 datasheet
FastIRFET IRFH4226PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4 (@ VGS = 10V) m (@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 70 A PQFN 5X6 mm (@TC (Bottom) = 25 C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 16 nC... See More ⇒
Detailed specifications: H369, H370, H380TM, H3904, H3906, H400S, H420, H421, A1013, H423, H5342, H5401, H546, H547, H548, H549, H5551
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