H423 Specs and Replacement
Type Designator: H423
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.83 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
H423 Substitution
- BJT ⓘ Cross-Reference Search
H423 datasheet
P NP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H423 APPLICATIONS Class-B video output stages in colour television and professional monitor equipment ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 ... See More ⇒
FastIRFET IRFH4234PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 4.6 (@ VGS = 10V) m (@ VGS = 4.5V) 7.3 Qg (typical) 8.2 nC ID 60 A PQFN 5X6 mm (@TC (Bottom) = 25 C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 8.2 nC) Lo... See More ⇒
Detailed specifications: H370, H380TM, H3904, H3906, H400S, H420, H421, H422, 2SB817, H5342, H5401, H546, H547, H548, H549, H5551, H556
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