H5609 Datasheet, Equivalent, Cross Reference Search
Type Designator: H5609
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
H5609 Transistor Equivalent Substitute - Cross-Reference Search
H5609 Datasheet (PDF)
..1. Size:106K shantou-huashan
h5609.pdf
h5609.pdf
NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H5609 APPLICATIONS AUDIO AMPLIFICATION ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TstgStorage Temperature -55~150TjJunction Temperature
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , B772 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
