All Transistors. H5609 Datasheet

 

H5609 Datasheet and Replacement


   Type Designator: H5609
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
 

 H5609 Substitution

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H5609 Datasheet (PDF)

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H5609

NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H5609 APPLICATIONS AUDIO AMPLIFICATION ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TstgStorage Temperature -55~150TjJunction Temperature

Datasheet: H546 , H547 , H548 , H549 , H5551 , H556 , H557 , H558 , TIP2955 , H5610 , H562 , H639 , H643 , H732TM , H733 , H789A , H8050S .

History: 2DI300A-050 | 1664

Keywords - H5609 transistor datasheet

 H5609 cross reference
 H5609 equivalent finder
 H5609 lookup
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