All Transistors. H5609 Datasheet

 

H5609 Datasheet and Replacement


   Type Designator: H5609
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
 

 H5609 Substitution

   - BJT ⓘ Cross-Reference Search

   

H5609 Datasheet (PDF)

 ..1. Size:106K  shantou-huashan
 h5609.pdf pdf_icon

H5609

NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H5609 APPLICATIONS AUDIO AMPLIFICATION ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TstgStorage Temperature -55~150TjJunction Temperature

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 1664

Keywords - H5609 transistor datasheet

 H5609 cross reference
 H5609 equivalent finder
 H5609 lookup
 H5609 substitution
 H5609 replacement

 

 
Back to Top

 


 
.