H562 Specs and Replacement

Type Designator: H562

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

 H562 Substitution

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H562 datasheet

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H562

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H562

HG RF POWER TRANSISTOR TH562 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR SD1731 (TH562) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .OPTIMIZED FOR SSB .30 MHz .50 VOLTS .EFFICIENCY 40% .COMMON EMITTER .GOLD METALLIZATION .P = 220 W PEP WITH 13 dB GAIN OUT .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1731 TH562 PIN CONNECTION DESCRIPTION The SD1... See More ⇒

Detailed specifications: H548, H549, H5551, H556, H557, H558, H5609, H5610, BC549, H639, H643, H732TM, H733, H789A, H8050S, H817, H8550S

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