All Transistors. H562 Datasheet

 

H562 Datasheet and Replacement


   Type Designator: H562
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
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H562 Datasheet (PDF)

 ..1. Size:260K  shantou-huashan
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H562

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H562 APPLICATIONS Low frequency power amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

 0.1. Size:264K  hgsemi
 th562.pdf pdf_icon

H562

HG RF POWER TRANSISTORTH562SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORSD1731 (TH562)RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.OPTIMIZED FOR SSB.30 MHz.50 VOLTS.EFFICIENCY 40%.COMMON EMITTER.GOLD METALLIZATION.P = 220 W PEP WITH 13 dB GAINOUT.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1731 TH562PIN CONNECTIONDESCRIPTIONThe SD1

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