All Transistors. H639 Datasheet

 

H639 Datasheet and Replacement


   Type Designator: H639
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100(TYP) MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

 H639 Substitution

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H639 Datasheet (PDF)

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H639

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H639 APPLICATIONS Switching And Amplifier Application. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

Datasheet: H549 , H5551 , H556 , H557 , H558 , H5609 , H5610 , H562 , D882P , H643 , H732TM , H733 , H789A , H8050S , H817 , H8550S , H9012 .

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