H639 Specs and Replacement
Type Designator: H639
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
H639 Substitution
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H639 datasheet
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H639 APPLICATIONS Switching And Amplifier Application. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation ... See More ⇒
Detailed specifications: H549, H5551, H556, H557, H558, H5609, H5610, H562, 2SC2240, H643, H732TM, H733, H789A, H8050S, H817, H8550S, H9012
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