HB772S Specs and Replacement
Type Designator: HB772S
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 typ MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
HB772S Substitution
- BJT ⓘ Cross-Reference Search
HB772S datasheet
PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation ... See More ⇒
Detailed specifications: HA1695, HA1943, HA1962, HA42, HA44, HA56, HA92, HA94, BD139, HC1417, HC4468, HC5027H, HC5200, HC5242, HC8050, HC8050S, HC8550
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