All Transistors. HEB834 Datasheet

 

HEB834 Datasheet and Replacement


   Type Designator: HEB834
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9(TYP) MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220AB
 

 HEB834 Substitution

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HEB834 Datasheet (PDF)

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HEB834

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEB834 APPLICATIONS Low Frequency Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220AB TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

Datasheet: HC5200 , HC5242 , HC8050 , HC8050S , HC8550 , HC8550S , HD882S , HD965 , BD140 , HED880 , HEP31 , HEP31A , HEP31B , HEP31C , HEP32 , HEP32A , HEP32B .

History: BD699

Keywords - HEB834 transistor datasheet

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