HEB834 Datasheet, Equivalent, Cross Reference Search
Type Designator: HEB834
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9(TYP) MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220AB
HEB834 Transistor Equivalent Substitute - Cross-Reference Search
HEB834 Datasheet (PDF)
..1. Size:73K shantou-huashan
heb834.pdf
heb834.pdf
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEB834 APPLICATIONS Low Frequency Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220AB TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
