HEB834 Specs and Replacement

Type Designator: HEB834

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 9 typ MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO220AB

 HEB834 Substitution

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HEB834 datasheet

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HEB834

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Detailed specifications: HC5200, HC5242, HC8050, HC8050S, HC8550, HC8550S, HD882S, HD965, S8050, HED880, HEP31, HEP31A, HEP31B, HEP31C, HEP32, HEP32A, HEP32B

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