All Transistors. HEP32B Datasheet

 

HEP32B Datasheet and Replacement


   Type Designator: HEP32B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220AB
 

 HEP32B Substitution

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HEP32B Datasheet (PDF)

 9.1. Size:65K  shantou-huashan
 hep32-a-b-c.pdf pdf_icon

HEP32B

PNP S I L I C O N T R A N S I S T O R HEP32 Series Shantou Huashan Electronic Devices Co.,Ltd. HEP32/HEP32A/HEP32B/HEP32C APPLICATIONS Mediu Power Linear switching Applications. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220AB TstgStorage Temperature -55~150 TjJunction Temperature

Datasheet: HEB834 , HED880 , HEP31 , HEP31A , HEP31B , HEP31C , HEP32 , HEP32A , TIP122 , HEP32C , HEP41C , HEP42C , HM28S , HS733 , HS945 , HX1267 , HX128M .

History: RT2914 | BFT35 | BUP50A | DRA9114T | D33J26 | MPS4124 | 2S30

Keywords - HEP32B transistor datasheet

 HEP32B cross reference
 HEP32B equivalent finder
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