SD4590 Datasheet, Equivalent, Cross Reference Search
Type Designator: SD4590
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 960 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT262
SD4590 Transistor Equivalent Substitute - Cross-Reference Search
SD4590 Datasheet (PDF)
sd4590.pdf
SD4590RF & MICROWAVE TRANSISTORS800-960 MHz CELLULAR BASE STATIONGOLD METALLIZATION.DIFFUSED EMITTER BALLASTING.INTERNAL INPUT/OUTPUT MATCHING.COMMON EMITTER CONFIGURATION.DESIGNED FOR LINEAR OPERATION.HIGH SATURATED POWER CAPABILITY.26 VOLT, 900 MHz PERFORMANCE..400 x .860 4LFL (M208)P 150 W MIN.OUT =epoxy sealedGAIN = 8.5 dB MIN.IMD -28dB MAX. @ POU
2sd459.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switching
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
