SD4590 Specs and Replacement

Type Designator: SD4590

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 28 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 960 MHz

Collector Capacitance (Cc): 75 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT262

 SD4590 Substitution

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SD4590 datasheet

 ..1. Size:130K  st

 sd4590.pdf pdf_icon

SD4590

SD4590 RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION GOLD METALLIZATION . DIFFUSED EMITTER BALLASTING . INTERNAL INPUT/OUTPUT MATCHING . COMMON EMITTER CONFIGURATION . DESIGNED FOR LINEAR OPERATION . HIGH SATURATED POWER CAPABILITY . 26 VOLT, 900 MHz PERFORMANCE . .400 x .860 4LFL (M208) P 150 W MIN. OUT = epoxy sealed GAIN = 8.5 dB MIN. IMD -28dB MAX. @ POU... See More ⇒

 ..2. Size:116K  njs

 sd4590.pdf pdf_icon

SD4590

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 9.1. Size:190K  inchange semiconductor

 2sd459.pdf pdf_icon

SD4590

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching ... See More ⇒

Detailed specifications: SD1013-3, SD1014-02, SD1015, SD1018, SD1019-2, SD1019-5, SD4011, SD4013, MPSA42, S8050B, S8050C, S8050D, S8050G, S8550B, S8550C, S8550D, S8550G

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