All Transistors. SD4590 Datasheet

 

SD4590 Datasheet and Replacement


   Type Designator: SD4590
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 28 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 960 MHz
   Collector Capacitance (Cc): 75 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT262
 

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SD4590 Datasheet (PDF)

 ..1. Size:130K  st
 sd4590.pdf pdf_icon

SD4590

SD4590RF & MICROWAVE TRANSISTORS800-960 MHz CELLULAR BASE STATIONGOLD METALLIZATION.DIFFUSED EMITTER BALLASTING.INTERNAL INPUT/OUTPUT MATCHING.COMMON EMITTER CONFIGURATION.DESIGNED FOR LINEAR OPERATION.HIGH SATURATED POWER CAPABILITY.26 VOLT, 900 MHz PERFORMANCE..400 x .860 4LFL (M208)P 150 W MIN.OUT =epoxy sealedGAIN = 8.5 dB MIN.IMD -28dB MAX. @ POU

 ..2. Size:116K  njs
 sd4590.pdf pdf_icon

SD4590

 9.1. Size:190K  inchange semiconductor
 2sd459.pdf pdf_icon

SD4590

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switching

Datasheet: SD1013-3 , SD1014-02 , SD1015 , SD1018 , SD1019-2 , SD1019-5 , SD4011 , SD4013 , 13001-A , S8050B , S8050C , S8050D , S8050G , S8550B , S8550C , S8550D , S8550G .

History: 2N473A | 2N3802DCSM | 2N2472

Keywords - SD4590 transistor datasheet

 SD4590 cross reference
 SD4590 equivalent finder
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 SD4590 substitution
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