SD4590 Datasheet and Replacement
Type Designator: SD4590
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 960 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT262
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SD4590 Datasheet (PDF)
sd4590.pdf

SD4590RF & MICROWAVE TRANSISTORS800-960 MHz CELLULAR BASE STATIONGOLD METALLIZATION.DIFFUSED EMITTER BALLASTING.INTERNAL INPUT/OUTPUT MATCHING.COMMON EMITTER CONFIGURATION.DESIGNED FOR LINEAR OPERATION.HIGH SATURATED POWER CAPABILITY.26 VOLT, 900 MHz PERFORMANCE..400 x .860 4LFL (M208)P 150 W MIN.OUT =epoxy sealedGAIN = 8.5 dB MIN.IMD -28dB MAX. @ POU
2sd459.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switching
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SD200A | UNR221L | ZX5T853G | DTD114E | CMLT4413 | CHT848BWGP | 2SC1353
Keywords - SD4590 transistor datasheet
SD4590 cross reference
SD4590 equivalent finder
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SD4590 replacement
History: 2SD200A | UNR221L | ZX5T853G | DTD114E | CMLT4413 | CHT848BWGP | 2SC1353



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