S9016 Specs and Replacement
Type Designator: S9016
SMD Transistor Code: Y6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 28
Package: SOT23
S9016 Substitution
- BJT ⓘ Cross-Reference Search
S9016 datasheet
BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9016 FEATURES Pb Collector Current.(IC= 25mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9016 Y6 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbo... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD SOT-23 Plastic-Encapsulate Transistors S9016LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM 200 mW (Tamb=25 ) 2. 4 1. 3 Collector current ICM 0.025 A Collector-base voltage V(BR)CBO 30 V Operating and storage junction temperature range Unit mm TJ, Tstg... See More ⇒
Detailed specifications: S9013H, S9013I, S9014B, S9014C, S9014D, S9015B, S9015C, S9015D, 2N3055, S9016LT1, S9018G, S9018H, S9018I, SBC807-16LT1G, SBC807-16LT3G, SBC807-25LT1G, SBC807-25LT3G
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