SBCP68T1G Specs and Replacement
Type Designator: SBCP68T1G
SMD Transistor Code: CA
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Package: SOT223
SBCP68T1G Substitution
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SBCP68T1G datasheet
BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U... See More ⇒
Detailed specifications: SBCP53-10T1G, SBCP53-16T1G, SBCP53T1G, SBCP56-10T1G, SBCP56-16T1G, SBCP56-16T3G, SBCP56T1G, SBCP56T3G, 2SC5198, SBCW30LT1G, SBCW33LT1G, SBCW66GLT1G, SBCW72LT1G, SBCX19LT1G, SBF13007-O, SBF13009-O, SBF720T1G
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