All Transistors. SBCP68T1G Datasheet

 

SBCP68T1G Datasheet and Replacement


   Type Designator: SBCP68T1G
   SMD Transistor Code: CA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT223
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SBCP68T1G Datasheet (PDF)

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SBCP68T1G

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ZTX1051A | ECG95 | 3DA150C | R8066 | 2SD1376 | RCA9229A | C8050C

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