All Transistors. SBCP68T1G Datasheet

 

SBCP68T1G Datasheet and Replacement


   Type Designator: SBCP68T1G
   SMD Transistor Code: CA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT223
 

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SBCP68T1G Datasheet (PDF)

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SBCP68T1G

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

Datasheet: SBCP53-10T1G , SBCP53-16T1G , SBCP53T1G , SBCP56-10T1G , SBCP56-16T1G , SBCP56-16T3G , SBCP56T1G , SBCP56T3G , 2SC2383Y , SBCW30LT1G , SBCW33LT1G , SBCW66GLT1G , SBCW72LT1G , SBCX19LT1G , SBF13007-O , SBF13009-O , SBF720T1G .

History: 2SD983 | STC2073D | FK3964 | BC846BMTF | ST1505 | OC814 | DTA144WS3

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