SBCP68T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: SBCP68T1G
SMD Transistor Code: CA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: SOT223
SBCP68T1G Transistor Equivalent Substitute - Cross-Reference Search
SBCP68T1G Datasheet (PDF)
..1. Size:108K onsemi
sbcp68t1g.pdf
sbcp68t1g.pdf
BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U
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