SBCW66GLT1G Specs and Replacement

Type Designator: SBCW66GLT1G

SMD Transistor Code: EG

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.23 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT23

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SBCW66GLT1G datasheet

 ..1. Size:103K  onsemi

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SBCW66GLT1G

BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 Compliant* (TO-236) CASE 318-08 STYLE 6 MAXIMUM RATINGS COLLECTOR Ratin... See More ⇒

 ..2. Size:143K  onsemi

bcw66glt1g sbcw66glt1g.pdf pdf_icon

SBCW66GLT1G

BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 (TO-236) CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol Va... See More ⇒

Detailed specifications: SBCP56-10T1G, SBCP56-16T1G, SBCP56-16T3G, SBCP56T1G, SBCP56T3G, SBCP68T1G, SBCW30LT1G, SBCW33LT1G, 2SD669A, SBCW72LT1G, SBCX19LT1G, SBF13007-O, SBF13009-O, SBF720T1G, SBN13001, SBN13002, SBN13002D

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