All Transistors. SBCW66GLT1G Datasheet

 

SBCW66GLT1G Datasheet and Replacement


   Type Designator: SBCW66GLT1G
   SMD Transistor Code: EG
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.23 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23
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SBCW66GLT1G Datasheet (PDF)

 ..1. Size:103K  onsemi
 sbcw66glt1g.pdf pdf_icon

SBCW66GLT1G

BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin

 ..2. Size:143K  onsemi
 bcw66glt1g sbcw66glt1g.pdf pdf_icon

SBCW66GLT1G

BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant SOT-23(TO-236)CASE 318 STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol Va

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC2337A | D62T6550 | BC737-25 | DTC114E | AT270 | NTE2351 | CSDL468

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